科學(xué)研究：
主要研究領(lǐng)域：
寬禁帶半導(dǎo)體ZnO和AlN單晶材料生長(zhǎng)、缺陷和物性研究；冶金法提純多晶硅技術(shù)及應(yīng)用開發(fā)；高效太陽(yáng)電池用低位錯(cuò)Ge單晶生長(zhǎng)與缺陷控制；大直徑InAs單晶生長(zhǎng)及材料性質(zhì)。
承擔(dān)科研項(xiàng)目情況：
（ 1 ） 新型中長(zhǎng)波紅外探測(cè)器襯底GaSb和InAs單晶材料制備及應(yīng)用, 主持, 市地級(jí), 2018-03--2020-12
（ 2 ） 面向紅外探測(cè)應(yīng)用的GaSb單晶雜質(zhì)、缺陷及物性研究, 主持, 國(guó)家級(jí), 2015-01--2018-12
（ 3 ） 4-6英寸InP單晶VGF生長(zhǎng)技術(shù), 主持, 院級(jí), 2017-03--2019-12
（ 4 ） 高質(zhì)量GaSb單晶襯底加工技術(shù)及紅外探測(cè)應(yīng)用, 主持, 市地級(jí), 2017-08--2018-12
（ 5 ） 磷化銦材料, 主持, 國(guó)家級(jí), 2019-10--2022-09
（ 6 ） 高純磷化銦多晶制備技術(shù)及晶園襯底制備, 主持, 院級(jí), 2020-01--2020-12
主要學(xué)術(shù)成績(jī)：
通過(guò)實(shí)驗(yàn)研究揭示了原生磷化銦材料中氫-銦空位復(fù)合體缺陷的形成規(guī)律以及與材料電學(xué)補(bǔ)償和熱生缺陷的關(guān)系。通過(guò)研究和比較純磷和磷化鐵氣氛下高溫退火處理磷化銦材料后產(chǎn)生的深能級(jí)缺陷，發(fā)現(xiàn)了與退火過(guò)程中原子擴(kuò)散有關(guān)的缺陷產(chǎn)生與抑制現(xiàn)象并給出了物理解釋。在此基礎(chǔ)上證明這些深能級(jí)缺陷大部分與銦空位有關(guān)。同時(shí)掌握了抑制深能級(jí)缺陷產(chǎn)生、制備高質(zhì)量半絕緣磷化銦材料的物理機(jī)理和技術(shù)途徑。對(duì)影響晶體完整性的因素進(jìn)行了全面的分析研究，包括微缺陷的成因、結(jié)構(gòu)位錯(cuò)的形成原因以及所產(chǎn)生的晶格畸變、點(diǎn)缺陷對(duì)晶格完整性的影響等。這些研究成果有效促地進(jìn)了高質(zhì)量磷化銦等材料單晶生長(zhǎng)技術(shù)和單晶襯底制備技術(shù)的提高。
1 化合物半導(dǎo)體晶體生長(zhǎng)用高純石英器件研發(fā)及產(chǎn)業(yè)化 濮陽(yáng)坤;趙有文;張堯;陶明頓;龐海濤;李愛霞 連云港福東正佑照明電器有限公司 2017
2 6英寸VGF法鍺單晶片生產(chǎn)關(guān)鍵工藝技術(shù)研究 惠峰;李蘇濱;柳廷龍;鐘文;李雪峰;呂春富;董汝昆;肖祥江;趙有文;高永亮;董志遠(yuǎn);趙燕;張丹;段鑫敏;李明宣 云南中科鑫圓晶體材料有限公司 2016
3 以冷坩堝技術(shù)為寄出的光伏級(jí)多晶硅工業(yè)試驗(yàn) 董志遠(yuǎn);趙有文;楊俊;王俊;段滿龍;楊鳳云;霍佃鑫;胡雪松;劉彤;羅龍 包頭市山晟新能源有限責(zé)任公司 2012
4 深紫外LED用AlGaN材料生長(zhǎng)研究 王軍喜;趙有文;劉喆;閆建昌;馬平 中國(guó)科學(xué)院半導(dǎo)體研究所 2008
5 半導(dǎo)體光電功能材料磷化銦、氮化鎵和氧化鋅的特性研究 許小亮;趙有文;施朝淑 中國(guó)科學(xué)技術(shù)大學(xué) 2003
6 Ⅲ-Ⅴ族和Ⅱ-Ⅵ族半導(dǎo)體電學(xué)輸運(yùn)和發(fā)光特性的研究 許小亮;趙有文;施朝淑;劉洪圖 中國(guó)科學(xué)技術(shù)大學(xué) 2003
制定標(biāo)準(zhǔn)：
1 磷化銦多晶 GB/T 36706-2018 2019-07-17 國(guó)家標(biāo)準(zhǔn)
2 LED外延芯片用磷化鎵襯底 GB/T 30855-2014 2015-04-30 國(guó)家標(biāo)準(zhǔn)
3 LED外延芯片用砷化鎵襯底 GB/T 30856-2014 2015-04-30 國(guó)家標(biāo)準(zhǔn)
4 太陽(yáng)能電池用砷化鎵單晶 GB/T 25075-2010 2012-03-13 國(guó)家標(biāo)準(zhǔn)
5 化合物半導(dǎo)體拋光晶片亞表面損傷的反射差分譜測(cè)試方法 GB/T 26070-2010 2012-03-13 國(guó)家標(biāo)準(zhǔn)
發(fā)明專利：
[1]劉麗杰,趙有文,段滿龍,劉鵬,王書怡. 一種磷化銦晶片的清洗方法[P]. CN113690128A,2021-11-23.
[2]趙有文,段滿龍,劉鵬,盧偉,楊俊,劉京明,謝輝. 一種基于VGF法的氣相摻雜的晶體生長(zhǎng)方法[P]. CN111041550B,2021-10-12.
[3]何建軍,趙有文,沈桂英,劉京明. 一種硅磷合金的制備方法[P]. CN113371714A,2021-09-10.
[4]牛智川,李農(nóng),劉冰,徐應(yīng)強(qiáng),王國(guó)偉,蔣洞微,吳東海,郝宏玥,趙有文,朱小貴,何勝. 在GaSb襯底上生長(zhǎng)InAs層的生長(zhǎng)速度測(cè)定方法[P]. CN113358677A,2021-09-07.
[5]周媛,趙有文,謝輝,楊俊,沈桂英,劉京明. 一種去除銻化鎵單晶片殘余應(yīng)力的退火方法[P]. CN112899790A,2021-06-04.
[6]劉京明,趙有文. 一種低濃度P型磷化銦單晶的制備方法[P]. CN109629003B,2021-05-28.
[7]趙有文,段滿龍. 對(duì)VGF法生產(chǎn)的InP晶錠進(jìn)行籽晶、引晶及結(jié)晶情況判定的方法[P]. CN109629002B,2021-03-16.
[8]沈桂英,趙有文,孫靜,劉京明,余丁,謝輝. 砷化銦單晶片位錯(cuò)腐蝕液及位錯(cuò)腐蝕檢測(cè)方法[P]. CN110205681B,2020-12-15.
[9]趙有文,沈桂英,段滿龍,楊俊,盧偉,劉鵬. 基于VGF法晶體生長(zhǎng)用石英封帽以及晶體生長(zhǎng)裝置[P]. CN211620660U,2020-10-02.
[10]謝輝,趙有文,董志遠(yuǎn),劉京明. 一種降低半絕緣磷化銦單晶摻鐵濃度的方法[P]. CN108456928B,2020-09-22.
[11]白永彪,趙有文,沈桂英,董志遠(yuǎn),劉京明,謝暉,余丁. 籽晶保護(hù)裝置及單晶生長(zhǎng)方法[P]. CN108546986B,2020-09-15.
[12]劉彤,楊俊,劉京明,董志遠(yuǎn),趙有文. 一種銻化鎵單晶拋光片的清洗方法[P]. CN105405746B,2020-09-11.
[13]趙有文,盧偉,段滿龍,楊俊,劉京明. 一種基于VGF法的晶體生長(zhǎng)用雙層壁坩堝[P]. CN211005709U,2020-07-14.
[14]趙有文,段滿龍,盧偉,楊俊,劉京明. 一種晶體生長(zhǎng)裝置[P]. CN211005717U,2020-07-14.
[15]余丁,趙有文,白永彪,沈桂英,董志遠(yuǎn),劉京明,謝輝. 背表面場(chǎng)GaSb熱光伏電池及其制備方法[P]. CN108831933B,2020-05-12.
[16]趙有文,段滿龍,劉鵬,盧偉,楊俊,劉京明,謝輝. 一種基于VGF法的氣相摻雜的晶體生長(zhǎng)方法[P]. CN111041550A,2020-04-21.
[17]孫靜,趙有文,謝輝,沈桂英,董志遠(yuǎn),劉京明,周媛. 摻硫砷化銦體單晶片、其腐蝕方法及腐蝕劑[P]. CN110965129A,2020-04-07.
[18]趙有文,沈桂英,段滿龍,楊俊,盧偉,劉鵬. 基于VGF法晶體生長(zhǎng)用石英封帽、晶體生長(zhǎng)裝置及晶體生長(zhǎng)工藝[P]. CN110952133A,2020-04-03.
[19]段滿龍,趙有文,楊俊,劉京明,盧偉. 一種晶體生長(zhǎng)后的退火及脫鍋方法以及晶體制備方法[P]. CN110725008A,2020-01-24.
[20]段滿龍,趙有文. 晶體生長(zhǎng)的加熱裝置及生長(zhǎng)裝置[P]. CN209584423U,2019-11-05.
[21]趙有文,段滿龍. 晶體生長(zhǎng)用雙層坩堝[P]. CN209537670U,2019-10-25.
[22]沈桂英,趙有文,孫靜,劉京明,余丁,謝輝. 砷化銦單晶片位錯(cuò)腐蝕液及位錯(cuò)腐蝕檢測(cè)方法[P]. CN110205681A,2019-09-06.
[23]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種紫色石英管及其制備方法[P]. CN106186685B,2019-06-28.
[24]李雪峰,趙有文. 改善晶片主定位邊立面加工中出現(xiàn)缺陷的方法[P]. CN109808085A,2019-05-28.
[25]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種黃色石英管及其制備方法[P]. CN106219970B,2019-05-21.
[26]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種灰色石英管及其制備方法[P]. CN106219971B,2019-05-21.
[27]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種紅色石英管及其制備方法[P]. CN106219972B,2019-05-21.
[28]趙有文,段滿龍. 對(duì)VGF法生產(chǎn)的InP晶錠進(jìn)行籽晶、引晶及結(jié)晶情況判定的方法[P]. CN109629002A,2019-04-16.
[29]劉京明,趙有文. 一種低濃度P型磷化銦單晶的制備方法[P]. CN109629003A,2019-04-16.
[30]段滿龍,趙有文. 晶體生長(zhǎng)的加熱裝置及生長(zhǎng)裝置[P]. CN109594124A,2019-04-09.
[31]謝輝,趙有文. 一種晶體生長(zhǎng)方法[P]. CN109576776A,2019-04-05.
[32]趙有文,段滿龍. 晶體生長(zhǎng)用雙層坩堝及晶體生長(zhǎng)工藝[P]. CN109576777A,2019-04-05.
[33]余丁,趙有文,白永彪,沈桂英,董志遠(yuǎn),劉京明,謝輝. 背表面場(chǎng)GaSb熱光伏電池及其制備方法[P]. CN108831933A,2018-11-16.
[34]白永彪,趙有文,沈桂英,董志遠(yuǎn),劉京明,謝暉,余丁. 籽晶保護(hù)裝置及單晶生長(zhǎng)方法[P]. CN108546986A,2018-09-18.
[35]謝輝,趙有文,董志遠(yuǎn),劉京明. 一種提高半絕緣磷化銦單晶片電阻率均勻性的方法[P]. CN108486658A,2018-09-04.
[36]謝輝,趙有文,董志遠(yuǎn),劉京明. 一種降低半絕緣磷化銦單晶摻鐵濃度的方法[P]. CN108456928A,2018-08-28.
[37]謝輝,趙有文,董志遠(yuǎn),劉京明. 一種降低半絕緣磷化銦單晶深能級(jí)補(bǔ)償缺陷的方法[P]. CN108385167A,2018-08-10.
[38]沈桂英,趙有文,白永彪,劉京明,謝輝. 一種制備P型錳摻雜的砷化銦單晶的方法[P]. CN108085744A,2018-05-29.
[39]段滿龍,董志遠(yuǎn),趙有文,楊俊. 一種磷化銦的合成方法及其合成裝置[P]. CN107937984A,2018-04-20.
[40]趙有文,王俊,董志遠(yuǎn),劉京明. 用于磷化銦晶片的下盤方法[P]. CN107910246A,2018-04-13.
[41]趙有文,董志遠(yuǎn),楊俊,段滿龍. 富銦磷化銦多晶料的循環(huán)利用方法[P]. CN107829141A,2018-03-23.
[42]趙有文,段滿龍,盧偉,謝輝. 消除InP晶片微缺陷的方法[P]. CN107829142A,2018-03-23.
[43]趙有文,劉京明,段滿龍,董志遠(yuǎn),劉剛. 一種晶片研磨裝置[P]. CN107756232A,2018-03-06.
[44]段滿龍,趙有文,楊俊,盧偉. 一種摻鐵磷化銦單晶片的退火方法[P]. CN107675262A,2018-02-09.
[45]趙有文,段滿龍. 磷化銦多晶水平合成裝置[P]. CN206916255U,2018-01-23.
[46]蘇杰,劉彤,劉京明,趙有文. 采用閉管化學(xué)氣相傳輸方式生長(zhǎng)Ga2O3單晶的方法[P]. CN107400919A,2017-11-28.
[47]陳曉玉,趙有文. 太陽(yáng)能電池減反鈍化膜及其制備方法及太陽(yáng)能電池片[P]. CN107068774A,2017-08-18.
[48]楊翠柏,趙有文,段滿龍,楊光輝,劉剛,劉京明,楊風(fēng)云. 磷化銦晶錠切割(100)晶片的方法[P]. CN106863628A,2017-06-20.
[49]楊翠柏,趙有文,方聰,王鳳華,董志遠(yuǎn),高永亮,王俊. 熔區(qū)附加磁場(chǎng)裝置及具有其的VGF單晶生長(zhǎng)爐[P]. CN206204471U,2017-05-31.
[50]楊翠柏,趙有文,段滿龍,陳丙振,劉彤,盧偉,楊俊. 磷化銦多晶水平合成裝置及壓力平衡控制方法[P]. CN106757360A,2017-05-31.
[51]楊翠柏,趙有文,方聰,王鳳華,董志遠(yuǎn),高永亮,王俊. 熔區(qū)附加磁場(chǎng)裝置及具有其的VGF單晶生長(zhǎng)爐[P]. CN106498487A,2017-03-15.
[52]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種黃色石英管及其制備方法[P]. CN106219970A,2016-12-14.
[53]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種灰色石英管及其制備方法[P]. CN106219971A,2016-12-14.
[54]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種紅色石英管及其制備方法[P]. CN106219972A,2016-12-14.
[55]趙有文,段滿龍,尹朝蓉,尹文斌,孫勇. 一種棒狀砷的制備方法[P]. CN106222452A,2016-12-14.
[56]陶明頓,濮陽(yáng)坤,趙有文,龐海濤,張堯. 一種紫色石英管及其制備方法[P]. CN106186685A,2016-12-07.
[57]龐海濤,趙有文,濮陽(yáng)坤,莊子柱,王婧姝,李駿. 石英連熔爐芯桿氣壓穩(wěn)定裝置[P]. CN205710395U,2016-11-23.
[58]劉京明,劉彤,董志遠(yuǎn),趙有文. 一種控制GaSb單晶襯底表面顆粒度的方法[P]. CN106119972A,2016-11-16.
[59]劉京明,劉彤,董志遠(yuǎn),趙有文. 一種GaSb單晶襯底表面化學(xué)鈍化的方法[P]. CN106057663A,2016-10-26.
[60]龐海濤,趙有文,濮陽(yáng)坤,莊子柱,王婧姝,李駿. 石英連熔爐芯桿氣壓穩(wěn)定裝置[P]. CN105923980A,2016-09-07.
[61]劉京明,楊俊,劉彤,董志遠(yuǎn),趙有文. 一種生長(zhǎng)氮化鋁單晶用坩堝[P]. CN205223407U,2016-05-11.
[62]劉京明,劉彤,楊俊,董志遠(yuǎn),趙有文. 一種氮化鋁單晶的位錯(cuò)腐蝕方法[P]. CN105483833A,2016-04-13.
[63]劉彤,楊俊,劉京明,董志遠(yuǎn),趙有文. 一種銻化鎵單晶拋光片的清洗方法[P]. CN105405746A,2016-03-16.
[64]劉彤,楊俊,劉京明,董志遠(yuǎn),趙有文. 一種銻化鎵單晶拋光片腐蝕液[P]. CN105349290A,2016-02-24.
[65]曹可慰,趙有文. 偏[111]晶向鍺單晶片位錯(cuò)顯示用腐蝕液及腐蝕方法[P]. CN104862702A,2015-08-26.
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論文專著：
發(fā)表期刊論文：
[1]馮銀紅,沈桂英,趙有文,劉京明,楊俊,謝輝,何建軍,王國(guó)偉.無(wú)位錯(cuò)Te-GaSb(100)單晶拋光襯底的晶格完整性[J].人工晶體學(xué)報(bào),2022,51(06):1003-1011.
[2]劉麗杰,趙有文,黃勇,趙宇,王俊,王應(yīng)利,沈桂英,謝輝.面向MOCVD生長(zhǎng)InAs/GaSb超晶格紅外探測(cè)的InAs襯底表面制備（英文）[J].紅外與毫米波學(xué)報(bào),2022,41(02):420-424.
[3]Zhao, Youwen.Evaluation of residual stress in InP and InAs （100） substrates obtained from single crystals grown by LEC and VGF methods）, Mater. Sci. Semicond. Pro., 2021, 通訊作者
[4]Zhao, Youwen.Residual stress distribution and flatness of dislocation-free Te-GaSb (100） substrate, Jpn. J. Appl. Phys., 2021, 通訊作者
[5]Zhao, Youwen.Evaluation of LEC and VGF-InAs substrates through surface defect characyerization and epitaxy growth）, Mater. Sci. Semicond. Pro., 2021, 第 2 作者
[6]劉京明,趙有文.BAs晶體生長(zhǎng)研究進(jìn)展[J].人工晶體學(xué)報(bào),2021,50(02):391-396.
[7] Zhao, Youwen.HCl-H2SO4-H2O solution etching behavior of InAs (100) surface, Journal of Crystal Growth, 2020, 通訊作者
[8]Zhao, Youwen. VGF growth of high quality InAs single crystals with low low dislocation density, Journal of Crystal Growth, 2020, 第 8 作者
[9]Zhao, Youwen.A comparison of defects between InAs single crystals grown by Le\EC and VGF methods, Journal of Electronic Materials, 2020, 第 2 作者
[10]劉麗杰,吳遠(yuǎn)大,王玥,王亮亮,安俊明,趙有文.面向長(zhǎng)距離通訊1550 nm垂直腔面發(fā)射激光器的研究（英文）[J].紅外與毫米波學(xué)報(bào),2020,39(04):397-400.
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[12]Zhao, Youwen. Electrical conduction of carbon-ion-implanted InAs, Mater. Res. express, 2019, 通訊作者
[13]Zhao, Youwen Wet etching generation of dislocation pits with clear facets in LEC-InAs, Journal of Crystal Growth, 2019, 通訊作者
[14]Zhao, Youwen.Photoluminescene study acceptor defects in lightly doped n type, Journal of Semiconductors, 2019, 第 2 作者
[15] Zhao, Youwen.impurity band conduction in Mn-doped p type InAs single crystal, Materials Science in Semiconductor Processing, 2018, 第 2 作者
[16]Zhao, Youwen. LVM Spectroscopy Investigation of Complex Defects in InAs single crystals grown by the LEC Method, Journal of Electronic materials, 2018, 第 2 作者
[17]Zhao, Youwen 退火Te-GaSb的電學(xué)性質(zhì), Electrical and optical property of annealed Te-doped GaSb, Journal of Semiconductors, 2017, 通訊作者
[18]趙有文,段滿龍,盧偉,楊俊,董志遠(yuǎn),劉剛,高永亮,楊鳳云,王風(fēng)華,王俊,劉京明,謝輝,王應(yīng)利,盧超. 4 inch低位錯(cuò)密度InP單晶的VGF生長(zhǎng)及性質(zhì)研究[J]. VGF growth of 4 inch diameter InP with low dislocation density and property investigation, 人工晶體學(xué)報(bào), ,2017,46(05):792-796.
[19]楊俊,段滿龍,盧偉,劉剛,高永亮,董志遠(yuǎn),王俊,楊鳳云,王鳳華,劉京明,謝輝,王應(yīng)利,盧超,趙有文.4英寸低位錯(cuò)密度GaSb單晶生長(zhǎng)及高質(zhì)量襯底制備, growth of 4 inch diameter GaSb single crystal with low dislocation density and high quality substrate preparation, 人工晶體學(xué)報(bào),2017,46(05):820-824. 通訊作者
[20] 通過(guò)消除原生缺陷提高InAs單晶的透光率, Enhancement of below gap transmission of InAs single crystal via suppression of native defects, Mater. Res. Express, 2017, 通訊作者
[21]Bai Yong-Biao; Zhao You-Wen*; Shen Gui-Ying; Chen Xiao-Yu; Liu Jing-Ming; Xie Hui; Dong Zhi-Yuan; Yang Jun; Yang Feng-Yun; Wang Feng-Hua.N-type GaSb single crystals with high below-band gap transmission[J].Chinese Physics B,2017,26(10):446-449.通訊作者
[22]陳曉玉,劉彤,劉京明,謝輝,趙有文,董志遠(yuǎn),馬承紅,和江變.晶硅太陽(yáng)電池黑斑分析[J].半導(dǎo)體光電,2017,38(01):21-25.
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[24]Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment, Journal of Semiconductors, 2017, 通訊作者
[25]晶硅電池的黑斑缺陷, black spot defect in c-Si solar cell, 半導(dǎo)體光電, 2016, 通訊作者
[26]蘇杰,劉彤,劉京明,楊俊,白永彪,沈桂英,董志遠(yuǎn),王芳芳,趙有文.Thermally induced native defect transform in annealed GaSb[J].Chinese Physics B,2016,25(07):454-458.
[27]曹可慰,劉彤,劉京明,謝輝,陶東言,趙有文,董志遠(yuǎn),惠峰.Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell[J].Journal of Semiconductors,2016,37(06):25-30.
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[31]Xie Hui; Zhao Youwen*; Liu Tong; Dong Zhiyuan; Yang Jun; Liu Jingming..C-H complex defects and their influence in ZnO single crystal[J].Chinese Physics B,2015,24(10):511-513., 通訊作者
[32]Tao Dongyan*; Cheng Yu; Liu Jingming; Su Jie; Liu Tong; Yang Fengyun; Wang Fenghua; Cao Kewei; Dong Zhiyuan; Zhao Youwen.Chemical and electrical properties of(NH4)2S passivated GaSb surface[J].Journal of Semiconductors,2015,36(07):49-53.
[33]Xie Hui*; Liu Tong; Liu Jingming; Cao Kewei; Dong Zhiyuan; Yang Jun; Zhao Youwen。Implantation induced defects and electrical properties of Sb-implanted ZnO.SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2015, 58(8): 1333-1118.
[34]Dongyan Tao; Yu Cheng; Jingming Liu; Jie Su; Tong Liu; Fengyun Yang; Fenghua Wang; Kewei Cao; Zhiyuan Dong; Youwen Zhao*.Improved surface and electrical properties of passivated GaSb with less alkaline sulfi de solution. Materials Sciencein Semiconductor Processing, 2015, 40: 685-689.
[35]Zhao, Youwen.GaSb原生缺陷的熱致轉(zhuǎn)變, Thermally induced native defect transform in annealed GaSb, Chin. Phys. B, 2015, 通訊作者
[36]Zhao, Youwen.Improved surface and electrical properties of passivated GaSb with lessalkaline sulfi de solution,, Materials Science in Semiconductor Processing, 2015, 通訊作者
[37]IZhao, Youwen.mplantation induced defects and electrical properties of Sb-implanted ZnO, SCIENCE CHINA Technological Sciences, 2015, 第 4 作者
[38]Zhao, Youwen.Evaluation of four inch diameter VGF-Ge substrate used for manufacturing Multi-junction Solar Cell, Journal of Semiconductor, 2015, 通訊作者
[39]程雨,劉京明,劉彤,蘇杰,楊鳳云,董志遠(yuǎn),趙有文.不同晶向GaSb晶片表面化學(xué)組分及形貌分析[J].半導(dǎo)體光電,2015,36(06):922-924+938.
[40]劉京明,劉彤,楊俊,陶東言,段滿龍,董志遠(yuǎn),趙有文,李百泉.AlN原料的鎢網(wǎng)爐高溫提純[J].材料科學(xué)與工程學(xué)報(bào),2015,33(04):601-604.
[41] Chen, Teng*; Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong. Synthesis of chalcopyrite CuIn1-xGaxSe2 alloys for photovoltaic application by a novel melting method.Materials Letters, 2013, 106: 52-55.
[42]Liu, Jingming*; Zhao, Youwen; Dong, Zhiyuan; Yang, Fengyun; Wang, Fenghua; Cao, Kewei; Liu, Tong; Xie, Hui; Chen, Teng. Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method.Journal of Vacuum Science and Technology A, 2013, 31(3): 031404.
[43]Chen, Teng*; Zhao, Youwen; Dong, Zhiyuan; Liu, Tong; Wang, Jun; Xie, Hui. Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method.Semiconductor Science and Technology, 2013, 28(1): 015024.
[44]Liu, Tong*; Dong, Zhiyuan; Zhao, Youwen; Wang, Jun; Chen, Teng; Xie, Hui; Li, Jian; Ni, Haijiang; Huo, Dianxin.Purification of metallurgical silicon through directional solidification in a large cold crucible.Journal of Crystal Growth, 2012, 355(1): 145-150.
[45]Liu, Tong*; Dong, Zhiyuan; Zhao, Youwen; Wang, Jun; Chen, Teng; Xie, Hui; Li, Jian; Ni, Haijiang; Huo, Dianxin.Large scale purification of metallurgical silicon for solar cell by using electron beam melting.Journal of Crystal Growth, 2012, 351(1): 19-22.
[46]Li Hui*; Zhou Kai; Pang Jingbiao; Shao Yundong; Wang Zhu; Zhao Youwen. Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation , Semiconductor Science and Technology, 2011, 26(7): 075016. , 通訊作者
[47]趙有文; 楊鳳云; 段滿龍; 孫文榮; 董志遠(yuǎn); 楊俊; 胡煒杰; 劉剛; 王俊; 王應(yīng)利.高質(zhì)量化合物InP、GaSb和InAs開盒即用單晶襯底制備.第十六屆全國(guó)化合物半導(dǎo)體材料、微波器件和光電器件學(xué)術(shù)會(huì)議, 2010-10-25.
[48]陳燕,鄧愛紅,趙有文,張英杰,余鑫祥,喻菁,龍娟娟,周宇璐,張麗然.非摻半絕緣InP材料的電子輻照缺陷研究[J].四川大學(xué)學(xué)報(bào)(自然科學(xué)版),2010,47(05):1069-1072.
[49]胡煒杰,趙有文,段滿龍,王應(yīng)利,王俊.InAs單晶襯底的表面形貌和化學(xué)成分分析[J].人工晶體學(xué)報(bào),2010,39(04):878-882.
[50]胡煒杰,趙有文,孫文榮,段滿龍,董志遠(yuǎn),楊俊.Residual impurities and electrical properties of undoped LEC InAs single crystals[J].半導(dǎo)體學(xué)報(bào),2010,31(04):1-4.
[51]Zhao, Youwen.Donor defect in P-diffused bulk ZnO single crystal , AIP Conference Proceedings, 2009, 第 1 作者
[52]Li, Hui; Wang, Zhu*; Zhou, Kai; Pang, Jingbiao; Ke, Junyu; Zhao, Youwen. Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence. Journal of Optoelectronics and Advanced Materials, 2009, 11(8): 1122-1126.
[53]李巍巍,趙有文,董志遠(yuǎn),楊俊,胡煒杰,客建紅,黃艷,高振華.Luminescence spectroscopy of ion implanted AlN bulk single crystal[J].半導(dǎo)體學(xué)報(bào),2009,30(08):31-33.
[54]李巍巍,趙有文,董志遠(yuǎn),楊俊,胡煒杰,客建紅.Wet etching and infrared absorption of AlN bulk single crystals[J].半導(dǎo)體學(xué)報(bào),2009,30(07):27-30.
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[59]占榮,趙有文,于會(huì)永,高永亮,惠峰.高溫退火處理提高半絕緣VGF-GaAs單晶的電學(xué)性能[J].半導(dǎo)體學(xué)報(bào),2008(09):1770-1774.
[60]于會(huì)永,趙有文,占榮,高永亮,惠峰.VGF法生長(zhǎng)的低位錯(cuò)摻Si-GaAs單晶的缺陷和性質(zhì)[J].Pan Tao Ti Hsueh Pao/chinese Journal of Semiconductors, 2008, (09): 1775-1778..
[61]周立,陳涌海,王占國(guó),趙有文.多晶AlN光學(xué)性質(zhì)研究Optical Characteristics of Poly- crystalline AIN , [J].光散射學(xué)報(bào),2008(03):245-248.
[62]張璠,趙有文,董志遠(yuǎn),張瑞,楊俊.銦摻雜ZnO體單晶的生長(zhǎng)及其性質(zhì)[J].半導(dǎo)體學(xué)報(bào),2008(08):1540-1543.
[63]王柱,柯君玉,李輝,龐錦標(biāo),戴益群,趙有文.用正電子研究原生ZnO單晶中的缺陷[J].武漢大學(xué)學(xué)報(bào)(理學(xué)版),2008(03):305-308.
[64]Zhao, Y. W.*; Dong, Z. Y.. Annihilation of deep level defects in InP through high temperature annealing.Journal of Physics and Chemistry of Solids, 2008, 69(2-3): 551-554.
[65]Wei, Xuecheng; Zhao, Youwen; Dong, Zhiyuan; Li, Jinmin.Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method. Journal of Crystal Growth, 2008, 310(3): 639-645.
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[67]李巍巍; 趙有文; 董志遠(yuǎn); 楊俊; 胡煒杰 離子注入AlN單晶的熒光譜分析.第十五屆全國(guó)化合物半導(dǎo)體材料、微波器件和光電器件學(xué)術(shù)會(huì)議, 2008-11-30.
[68]董志遠(yuǎn); 趙有文; 楊俊; 胡煒杰 PVT法生長(zhǎng)AlN單晶的雜質(zhì)和缺陷分析. 第十五屆全國(guó)化合物半導(dǎo)體材料、微波器件和光電器件學(xué)術(shù)會(huì)議, 2008-11-30.
[69]胡煒杰; 趙有文; 孫文榮; 段滿龍; 董志遠(yuǎn); 楊俊.非摻雜LEC-InAs單晶的殘留雜質(zhì)與電學(xué)性能研究. 第十五屆全國(guó)化合物半導(dǎo)體材料、微波器件和光電器件學(xué)術(shù)會(huì)議, 2008-11-30.
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趙有文，男，博士，現(xiàn)任中國(guó)科學(xué)院半導(dǎo)體研究所研究員，博士生導(dǎo)師。 
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